Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices

Аннотация

The generalized results on the synthesis of zinc chalcogenide ultrathin layers using an atomic layer deposition on the surface of silicon and A^IIIB^V compounds have been presented. The main regularities inherent in the chemosorption of the components and the conditions required for the layered mechanism responsible for the formation of nanostructures of the compounds mentioned are established. The electrical properties of the synthesized nanostructures have been estimated.