Atomic Layer Deposition of Y2O3 Using Tris(butylcyclopentadienyl)yttrium and Water

Аннотация

In this work, atomic-layer deposition (ALD) of yttrium oxide (Y₂O₃) was demonstrated using tris(butylcyclopentadienyl)yttrium (Y(CpBut)₃) and H₂O . Yttrium precursor showed thermal stability and a high reactivity in surface reactions with H₂O. In situ monitoring of the deposition process by quartz crystal microbalance (QCM) showed that the growth of oxide is accompanied by the absorption of water into the bulk of the film, which can lead to chemical vapor deposition (CVD) type processes. Reducing amount of dosed water as well as purge time extension during ALD cycling allow to mitigate the CVD effects. The Y₂O₃ film growth rate 230°C varied depending on the number of cycles and had maximum value of 1.7 Å/cycle. The films obtained at 230°C had a cubic polycrystalline structure with an average density of 96% of the Y₂O₃ bulk density. The X-ray photoelectron spectroscopy (XPS) measurements showed a carbon impurity level below the detections limit (~0.2 at %). The O/Y atomic concentration ratio estimated by Rutherford backscattering spectroscopy (RBS) was ~1.58. As deposited Y₂O₃ films had a refractive index of 1.85 (at 632.8 nm), whereas with protective ALD Al₂O₃ film, the refractive index was 1.73.