Copper etching kinetics in a high-frequency discharge of freon R12
- Авторы: Dunaev A.1, Murin D.1
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Учреждения:
- Research Institute for Thermodynamics and Kinetics of Chemical Processes
- Выпуск: Том 46, № 4 (2017)
- Страницы: 261-266
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186424
- DOI: https://doi.org/10.1134/S1063739717040023
- ID: 186424
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Аннотация
Some specific features of the interaction between copper and freon R12 and the effect of the treatment time and external plasma parameters (temperature, bias power, applied power, and gas pressure) on the copper etching rate are experimentally studied. Activation energies (within the studied temperature range) are established to be typical for heterogeneous reactions controlled by adsorption-desorption processes, thus indicating the key role of ion bombardment in activating the desorption of a passivating film. The surface quality of the treated specimens was analyzed by atomic force microscopy.
Об авторах
A. Dunaev
Research Institute for Thermodynamics and Kinetics of Chemical Processes
Автор, ответственный за переписку.
Email: dunaev-80@mail.ru
Россия, Ivanovo, 153000
D. Murin
Research Institute for Thermodynamics and Kinetics of Chemical Processes
Email: dunaev-80@mail.ru
Россия, Ivanovo, 153000