High efficiency photoelectrodes based on porous silicon
- Авторы: Tynyshtykbayev K.1, Glazman V.1, Muratov D.1, Rakhmetov B.1, Tokmoldin N.1, Tokmoldin S.1
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Учреждения:
- Institute of Physics and Technology
- Выпуск: Том 45, № 8-9 (2016)
- Страницы: 603-612
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186120
- DOI: https://doi.org/10.1134/S106373971608014X
- ID: 186120
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Аннотация
Using the por−Si electrodes promotes the separation of water molecules inside por−Si nanopores and efficient emission of hydrogen during water electrolysis. The por−Si/c−Si heterostructure makes it possible to solve the basic problem of water photoelectrolysis on the silicon electrodes—their energetic insufficiency. The combined electrochemical and physical deposition of Ni on the surface of por−Si, the formation of NiSi−silicide coatings on the surface of the pores, and the subsequent production of por−Si photoelectrodes based on the NiSi/por−Si/c−Si/Al heterostructure makes it possible to improve their corrosion resistance to oxidation and anodic dissolution, increase the efficiency of hydrogen emission, and extend the lifetime of photoelectrodes.
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K. Tynyshtykbayev
Institute of Physics and Technology
Автор, ответственный за переписку.
Email: kt011@sci.kz
Казахстан, Almaty, 050032
V. Glazman
Institute of Physics and Technology
Email: kt011@sci.kz
Казахстан, Almaty, 050032
D. Muratov
Institute of Physics and Technology
Email: kt011@sci.kz
Казахстан, Almaty, 050032
B. Rakhmetov
Institute of Physics and Technology
Email: kt011@sci.kz
Казахстан, Almaty, 050032
N. Tokmoldin
Institute of Physics and Technology
Email: kt011@sci.kz
Казахстан, Almaty, 050032
S. Tokmoldin
Institute of Physics and Technology
Email: kt011@sci.kz
Казахстан, Almaty, 050032