High efficiency photoelectrodes based on porous silicon
- Авторлар: Tynyshtykbayev K.1, Glazman V.1, Muratov D.1, Rakhmetov B.1, Tokmoldin N.1, Tokmoldin S.1
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Мекемелер:
- Institute of Physics and Technology
- Шығарылым: Том 45, № 8-9 (2016)
- Беттер: 603-612
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186120
- DOI: https://doi.org/10.1134/S106373971608014X
- ID: 186120
Дәйексөз келтіру
Аннотация
Using the por−Si electrodes promotes the separation of water molecules inside por−Si nanopores and efficient emission of hydrogen during water electrolysis. The por−Si/c−Si heterostructure makes it possible to solve the basic problem of water photoelectrolysis on the silicon electrodes—their energetic insufficiency. The combined electrochemical and physical deposition of Ni on the surface of por−Si, the formation of NiSi−silicide coatings on the surface of the pores, and the subsequent production of por−Si photoelectrodes based on the NiSi/por−Si/c−Si/Al heterostructure makes it possible to improve their corrosion resistance to oxidation and anodic dissolution, increase the efficiency of hydrogen emission, and extend the lifetime of photoelectrodes.
Негізгі сөздер
Авторлар туралы
K. Tynyshtykbayev
Institute of Physics and Technology
Хат алмасуға жауапты Автор.
Email: kt011@sci.kz
Қазақстан, Almaty, 050032
V. Glazman
Institute of Physics and Technology
Email: kt011@sci.kz
Қазақстан, Almaty, 050032
D. Muratov
Institute of Physics and Technology
Email: kt011@sci.kz
Қазақстан, Almaty, 050032
B. Rakhmetov
Institute of Physics and Technology
Email: kt011@sci.kz
Қазақстан, Almaty, 050032
N. Tokmoldin
Institute of Physics and Technology
Email: kt011@sci.kz
Қазақстан, Almaty, 050032
S. Tokmoldin
Institute of Physics and Technology
Email: kt011@sci.kz
Қазақстан, Almaty, 050032