Formation of nanosized elements of microwave transistor gates by ion beam lithography
- Авторы: Lavrentyev K.1, Nevolin V.1, Rozanov R.1, Tsarik K.1, Zaitsev A.1
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Учреждения:
- National Research University of Electronic Technology
- Выпуск: Том 45, № 7 (2016)
- Страницы: 451-454
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185850
- DOI: https://doi.org/10.1134/S1063739716070106
- ID: 185850
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Аннотация
A technique for forming a nanosized gate of a high-power microwave transistor is proposed. The optimal exposure parameters of 950-PMMA-A2 and ELP-20 resists are established. The technological route of ion beam lithography with the use of multilayer resists is investigated. A technique for fabricating a continuous mesh of earthed alignment marks formed on the ion-sensitive resist to visualize the alignment marks on a dielectric substrate by ion microscopy is developed.
Об авторах
K. Lavrentyev
National Research University of Electronic Technology
Email: vkn@miee.ru
Россия, Zelenograd, Moscow, 124498
V. Nevolin
National Research University of Electronic Technology
Автор, ответственный за переписку.
Email: vkn@miee.ru
Россия, Zelenograd, Moscow, 124498
R. Rozanov
National Research University of Electronic Technology
Email: vkn@miee.ru
Россия, Zelenograd, Moscow, 124498
K. Tsarik
National Research University of Electronic Technology
Email: vkn@miee.ru
Россия, Zelenograd, Moscow, 124498
A. Zaitsev
National Research University of Electronic Technology
Email: vkn@miee.ru
Россия, Zelenograd, Moscow, 124498