Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor

Аннотация

The influence of the doping concentration in the active layer and in the bulk substrate on the drain current of a silicon-on-insulator (SOI) field-effect Hall sensor (FEHS) using Sentaurus TCAD is studied. At the initial stage, the numerical model is corrected by comparing the transfer current-voltage characteristics of the calculation and the experimentally measured SOI FEHS sample. It is shown that, under low concentrations in the active layer, the drain current depends on the capacity of the front gate, while the doping concentration in the bulk substrate affects the drain current only when the device is operating in depletion mode.