Study of plasma radiation spectra of (HCl + Ar, H2, and Cl2) mixtures in GaAs etching

Аннотация

In order to form a topology on a semiconductor surface, a halogen-containing plasma is often used; therefore, the spectral control of the etching process is a topical technology in the modern electronics. In this work we have studied the radiation spectra of plasma-forming gases consisting of mixtures of hydrogen chloride with argon, chlorine, and hydrogen in the presence of a semiconductor plate of gallium arsenide. The lines and bands have been chosen for the spectral control of the rate of the etching process by the radiation intensity of the lines and bands of the etching products. It is shown that a connection between the radiation intensity of the products of GaAs etching and the rate of etching in the plasma of the mixtures of hydrogen chloride with argon and chlorine is described by a directly proportional dependence, which indicates the possibility of real-time control of the etching process by the spectral method.