Charge Transport in Layer Gallium Monosulfide in Direct and Alternate Electric Fields
- Autores: Asadov S.1, Mustafaeva S.2, Lukichev V.3
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Afiliações:
- Institute of Сatalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences
- Institute of Physics, Azerbaijan National Academy of Sciences
- Valiev Institute of Physics and Technology, Russian Academy of Sciences
- Edição: Volume 48, Nº 6 (2019)
- Páginas: 422-427
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187215
- DOI: https://doi.org/10.1134/S1063739719660016
- ID: 187215
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Resumo
It was established that the variable-range-hopping mechanism of dc-conductivity takes place in the GaS single crystal at low temperatures. The parameters of localized states in the forbidden gap of studieGaS samples have been evaluated. Dielectric properties (loss tangent, real (ε') and imaginary (ε'') parts of complex dielectric permittivity and ac-conductivity across the layers of the GaS layered single crystals have been studied in the frequency range f = 5 × 104 to 3.5 × 107 Hz. The results demonstrate that the dielectric dispersion in the GaS single crystal has a relaxation nature. Over the studied frequency range, the ac-conductivity of the GaS crystal varies as f0.8, characteristic of hopping conduction through localized states near the Fermi level. The Fermi-level density of states, the spread of their energies, and the mean hop distance and time have been estimated.
Sobre autores
S. Asadov
Institute of Сatalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences
Email: solmust@gmail.com
Azerbaijão, Baku, AZ-1143
S. Mustafaeva
Institute of Physics, Azerbaijan National Academy of Sciences
Autor responsável pela correspondência
Email: solmust@gmail.com
Azerbaijão, Baku, AZ-1143
V. Lukichev
Valiev Institute of Physics and Technology, Russian Academy of Sciences
Email: solmust@gmail.com
Rússia, Moscow, 117218