Copper-Containing Compositions Based on Alicyclic Polyimide for Microelectronic Applications
- Autores: Kravtsova V.1, Umerzakova M.1, Korobova N.2, Vertyanov D.2
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Afiliações:
- Bekturov Institute of Chemical Sciences
- National Research University of Electronic Technology (MIET)
- Edição: Volume 47, Nº 7 (2018)
- Páginas: 455-459
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186950
- DOI: https://doi.org/10.1134/S1063739718070077
- ID: 186950
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Resumo
The creation of polymer compositions with high electrophysical properties compatible with various types of fillers, including metal-containing compounds, is of vital importance for microelectronics. By polycondensation, new copper-containing polymer compositions based on alicyclic polyimide and its copolymers with aromatic polyheterocycles are obtained. The thermal, chemical, and physicomechanical properties and electrical conductivity of the new film composite materials are investigated. The conditions for obtaining copper-containing polymer compositions based on alicyclic polyimide and its copolymers with aromatic polyheterocycles are optimized. The samples are prepared in two ways: via a one-stage polycondensation reaction in the presence of catalytic amounts of inorganic compounds and via mechanically mixing the polymer components with the copper salts. A new film composite material with high physicomechanical and temperature characteristics and increased resistance to aggressive reagents is obtained. The developed metal-containing polymer compositions can be recommended for use in microelectronics for manufacturing integrated circuits as well as for obtaining elastic heat-conducting insulators operating in the temperature range from –180 to +400°C.
Sobre autores
V. D. Kravtsova
Bekturov Institute of Chemical Sciences
Email: korobova3@mail.ru
Cazaquistão, Almaty, 050010
M. B. Umerzakova
Bekturov Institute of Chemical Sciences
Email: korobova3@mail.ru
Cazaquistão, Almaty, 050010
N. E. Korobova
National Research University of Electronic Technology (MIET)
Autor responsável pela correspondência
Email: korobova3@mail.ru
Rússia, Moscow, 124498
D. V. Vertyanov
National Research University of Electronic Technology (MIET)
Email: korobova3@mail.ru
Rússia, Moscow, 124498