Calculating the high-frequency electrical conductivity of a thin semiconductor film for different specular reflection coefficients of its surface
- Autores: Kuznetsova I.1, Romanov D.1, Savenko O.1, Yushkanov A.2
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Afiliações:
- Demidov State University
- Moscow Region State University
- Edição: Volume 46, Nº 4 (2017)
- Páginas: 252-260
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186418
- DOI: https://doi.org/10.1134/S1063739717040059
- ID: 186418
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Resumo
In this paper, using the kinetic method, we calculate the conductivity of a thin semiconductor layer in an alternating electric field taking into account the different specular reflection coefficients of its surfaces. No constraints are imposed on the relation between the free path length of the electrons (holes) and the thickness of the layer. The dependences are analyzed of the modulus and the argument of the dimensionless conductivity on the dimensionless thickness of the layer, the dimensionless frequency of the external electric field, and specular reflection coefficient of one of its surfaces. The results are compared with the theoretical calculations and the experimental data for a metal film.
Sobre autores
I. Kuznetsova
Demidov State University
Autor responsável pela correspondência
Email: kuz@uniyar.ac.ru
Rússia, Yaroslavl, 150003
D. Romanov
Demidov State University
Email: kuz@uniyar.ac.ru
Rússia, Yaroslavl, 150003
O. Savenko
Demidov State University
Email: kuz@uniyar.ac.ru
Rússia, Yaroslavl, 150003
A. Yushkanov
Moscow Region State University
Email: kuz@uniyar.ac.ru
Rússia, Moscow, 105005