CVD-growth of CNT with the use of catalutic Ct–Me–N–O thin films incorporated in the technology
- Autores: Gromov D.1, Bulyarskii S.2, Dubkov S.1, Pavlov A.2,3, Skorik S.3, Trifonov A.4, Shulyat’ev A.1, Shaman Y.3, Kitsyuk E.2,3, Dudin A.2, Sirotina A.2, Gavrilov S.1
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Afiliações:
- MIET National Research University of Electronic Technology
- Institute for Nanotechnology of Microelectronics RAS
- Research and Manufacturing Complex Technology Center MIET
- Lukin R&D Institute of Physical Problems
- Edição: Volume 46, Nº 2 (2017)
- Páginas: 75-81
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186240
- DOI: https://doi.org/10.1134/S1063739717020032
- ID: 186240
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Resumo
The process of the formation of carbon nanotube arrays on Ct–Me–N catalytic alloys of low nickel content (10–20 at %) by chemical vapor deposition, where Ct is a catalytic metal from the group of Ni, Co, Fe, and Pd, and Me is a transition metal of group IV–VII of the periodic table, was investigated. It is shown that CNT grow effectively when the alloy contains Ti, V, Cr, Zr, Hf, Nb, and Ta. The addition of nitrogen and oxygen to the alloy’s composition gives rise to a buildup of oxynitrides, expelling of the catalyst, and formation of its clusters on the surface. The replacement of metals in the alloy has an effect on the diameter of the CNT. Moreover, the alloy films 10–500 nm thick can be used for the CNT growth, which is responsible for high degree of homogeneity and the repeatability of the process. CNT growth was not observed when the alloy contained W and Re.
Sobre autores
D. Gromov
MIET National Research University of Electronic Technology
Autor responsável pela correspondência
Email: gromadima@gmail.com
Rússia, Zelenograd
S. Bulyarskii
Institute for Nanotechnology of Microelectronics RAS
Email: gromadima@gmail.com
Rússia, Moscow, 119991
S. Dubkov
MIET National Research University of Electronic Technology
Email: gromadima@gmail.com
Rússia, Zelenograd
A. Pavlov
Institute for Nanotechnology of Microelectronics RAS; Research and Manufacturing Complex Technology Center MIET
Email: gromadima@gmail.com
Rússia, Moscow, 119991; Moscow, Zelenograd, 124498
S. Skorik
Research and Manufacturing Complex Technology Center MIET
Email: gromadima@gmail.com
Rússia, Moscow, Zelenograd, 124498
A. Trifonov
Lukin R&D Institute of Physical Problems
Email: gromadima@gmail.com
Rússia, Zelenograd
A. Shulyat’ev
MIET National Research University of Electronic Technology
Email: gromadima@gmail.com
Rússia, Zelenograd
Yu. Shaman
Research and Manufacturing Complex Technology Center MIET
Email: gromadima@gmail.com
Rússia, Moscow, Zelenograd, 124498
E. Kitsyuk
Institute for Nanotechnology of Microelectronics RAS; Research and Manufacturing Complex Technology Center MIET
Email: gromadima@gmail.com
Rússia, Moscow, 119991; Moscow, Zelenograd, 124498
A. Dudin
Institute for Nanotechnology of Microelectronics RAS
Email: gromadima@gmail.com
Rússia, Moscow, 119991
A. Sirotina
Institute for Nanotechnology of Microelectronics RAS
Email: gromadima@gmail.com
Rússia, Moscow, 119991
S. Gavrilov
MIET National Research University of Electronic Technology
Email: gromadima@gmail.com
Rússia, Zelenograd