Refined model of low-impedance film resistors with a comb-like structure
- Autores: Sadkov V.D.1, Lopatkin A.V.1
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Afiliações:
- Institute of Radioelectronics and Information Technologies
- Edição: Volume 45, Nº 7 (2016)
- Páginas: 492-497
- Seção: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185929
- DOI: https://doi.org/10.1134/S1063739716070143
- ID: 185929
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Resumo
Using the methods of finite element and conformal mapping, analytical models with low and ultralow resistance of the film resistors of the main types of comb-like (interdigital) structures with an arbitrary ratio between the surface resistivities of resistive and conductive films have been worked out. In the resultant resistance, the resistances of comb-like and connecting electrodes are taken into account, as well as the additional resistance caused by the passage of the current from the conductive to the resistive film and vice versa. The conditions under which an interface between the films can be treated as an equipotential surface are revealed. An equivalent circuit of low-impedance comb resistors, which are used as the sensors of the current in the circuits of stabilization and control, as well as thermal and current protection.
Sobre autores
V. Sadkov
Institute of Radioelectronics and Information Technologies
Email: lopatkin@nstuedu.com
Rússia, Nizhny Novgorod, 620078
A. Lopatkin
Institute of Radioelectronics and Information Technologies
Autor responsável pela correspondência
Email: lopatkin@nstuedu.com
Rússia, Nizhny Novgorod, 620078
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