Mathematical model of thin-film electrode polarization
- Авторлар: Kuznetsova I.A.1, Kulikov A.N.1, Kulova T.L.2, Metlitskaya A.V.1,3, Mironenko A.A.3, Rudyi A.S.1,3, Skundin A.M.2
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Мекемелер:
- Demidov State University
- Frumkin Institute of Physical Chemistry and Electrochemistry
- Institute of Physics and Technology, Yaroslavl Branch
- Шығарылым: Том 45, № 3 (2016)
- Беттер: 180-185
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185617
- DOI: https://doi.org/10.1134/S1063739716030057
- ID: 185617
Дәйексөз келтіру
Аннотация
A polarization equation is derived for a thin-film electrode based on a silicon nanocomposite. The shallow thickness of the active layer (several micrometers) allows making some simplifying assumptions when deriving this equation and makes it possible to consider the case of weak polarization. For the polarization equation, a boundary problem is formulated, solutions are obtained, and system parameters for galvanostatic discharge are evaluated. It is shown that the parameters of the solutions meet the test conditions for experimental thin-film Si–O–Al samples and the condition of weak polarization.
Авторлар туралы
I. Kuznetsova
Demidov State University
Email: metlitskaya2010@yandex.ru
Ресей, Yaroslavl
A. Kulikov
Demidov State University
Email: metlitskaya2010@yandex.ru
Ресей, Yaroslavl
T. Kulova
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: metlitskaya2010@yandex.ru
Ресей, Moscow
A. Metlitskaya
Demidov State University; Institute of Physics and Technology, Yaroslavl Branch
Хат алмасуға жауапты Автор.
Email: metlitskaya2010@yandex.ru
Ресей, Yaroslavl; Moscow
A. Mironenko
Institute of Physics and Technology, Yaroslavl Branch
Email: metlitskaya2010@yandex.ru
Ресей, Moscow
A. Rudyi
Demidov State University; Institute of Physics and Technology, Yaroslavl Branch
Email: metlitskaya2010@yandex.ru
Ресей, Yaroslavl; Moscow
A. Skundin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: metlitskaya2010@yandex.ru
Ресей, Moscow
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