Growth of Structurally Perfect Diamond Single Crystals at High Pressures and Temperatures. Review


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The investigations performed at high pressures and high temperatures (HTHP crystallization) have permitted clarifying the mechanism of phase transformations and carbon transport in solvent metals for diamond growth and elaborating methods for growing large-size structurally perfect diamond single crystals of types Ib, IIa, and IIb. The findings have provided the basis for the process of production of diamonds for applications in electronics, laser technology, precision machining operations, well drilling tools. The use of a large-volume six-punch high pressure apparatus makes it possible to grow diamond single crystals with a higher efficiency. It is estimated that this apparatus is capable of producing annually at least 1 mln carats of structurally perfect crystals of required types for various applications.

作者简介

V. Lysakovskyi

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
乌克兰, vul. Avtozavodska 2, Kyiv, 04074

N. Novikov

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
乌克兰, vul. Avtozavodska 2, Kyiv, 04074

S. Ivakhnenko

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
乌克兰, vul. Avtozavodska 2, Kyiv, 04074

O. Zanevskyy

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
乌克兰, vul. Avtozavodska 2, Kyiv, 04074

T. Kovalenko

Bakul Institute for Superhard Materials

编辑信件的主要联系方式.
Email: tetiana.v.kovalenko@gmail.com
乌克兰, vul. Avtozavodska 2, Kyiv, 04074

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