Growth of Structurally Perfect Diamond Single Crystals at High Pressures and Temperatures. Review


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Аннотация

The investigations performed at high pressures and high temperatures (HTHP crystallization) have permitted clarifying the mechanism of phase transformations and carbon transport in solvent metals for diamond growth and elaborating methods for growing large-size structurally perfect diamond single crystals of types Ib, IIa, and IIb. The findings have provided the basis for the process of production of diamonds for applications in electronics, laser technology, precision machining operations, well drilling tools. The use of a large-volume six-punch high pressure apparatus makes it possible to grow diamond single crystals with a higher efficiency. It is estimated that this apparatus is capable of producing annually at least 1 mln carats of structurally perfect crystals of required types for various applications.

Авторлар туралы

V. Lysakovskyi

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
Украина, vul. Avtozavodska 2, Kyiv, 04074

N. Novikov

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
Украина, vul. Avtozavodska 2, Kyiv, 04074

S. Ivakhnenko

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
Украина, vul. Avtozavodska 2, Kyiv, 04074

O. Zanevskyy

Bakul Institute for Superhard Materials

Email: tetiana.v.kovalenko@gmail.com
Украина, vul. Avtozavodska 2, Kyiv, 04074

T. Kovalenko

Bakul Institute for Superhard Materials

Хат алмасуға жауапты Автор.
Email: tetiana.v.kovalenko@gmail.com
Украина, vul. Avtozavodska 2, Kyiv, 04074

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