Growth of Structurally Perfect Diamond Single Crystals at High Pressures and Temperatures. Review
- Authors: Lysakovskyi V.V.1, Novikov N.V.1, Ivakhnenko S.A.1, Zanevskyy O.A.1, Kovalenko T.V.1
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Affiliations:
- Bakul Institute for Superhard Materials
- Issue: Vol 40, No 5 (2018)
- Pages: 315-324
- Section: Production, Structure, Properties
- URL: https://journals.rcsi.science/1063-4576/article/view/186309
- DOI: https://doi.org/10.3103/S1063457618050039
- ID: 186309
Cite item
Abstract
The investigations performed at high pressures and high temperatures (HTHP crystallization) have permitted clarifying the mechanism of phase transformations and carbon transport in solvent metals for diamond growth and elaborating methods for growing large-size structurally perfect diamond single crystals of types Ib, IIa, and IIb. The findings have provided the basis for the process of production of diamonds for applications in electronics, laser technology, precision machining operations, well drilling tools. The use of a large-volume six-punch high pressure apparatus makes it possible to grow diamond single crystals with a higher efficiency. It is estimated that this apparatus is capable of producing annually at least 1 mln carats of structurally perfect crystals of required types for various applications.
About the authors
V. V. Lysakovskyi
Bakul Institute for Superhard Materials
Email: tetiana.v.kovalenko@gmail.com
Ukraine, vul. Avtozavodska 2, Kyiv, 04074
N. V. Novikov
Bakul Institute for Superhard Materials
Email: tetiana.v.kovalenko@gmail.com
Ukraine, vul. Avtozavodska 2, Kyiv, 04074
S. A. Ivakhnenko
Bakul Institute for Superhard Materials
Email: tetiana.v.kovalenko@gmail.com
Ukraine, vul. Avtozavodska 2, Kyiv, 04074
O. A. Zanevskyy
Bakul Institute for Superhard Materials
Email: tetiana.v.kovalenko@gmail.com
Ukraine, vul. Avtozavodska 2, Kyiv, 04074
T. V. Kovalenko
Bakul Institute for Superhard Materials
Author for correspondence.
Email: tetiana.v.kovalenko@gmail.com
Ukraine, vul. Avtozavodska 2, Kyiv, 04074
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