Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs
- Авторы: Kozhemyakina E.V.1, Zhuravlev K.S.1
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Выпуск: Том 80, № 1 (2016)
- Страницы: 23-27
- Раздел: Proceedings of the XIV International Conference “Luminescence and Laser Physics”
- URL: https://journals.rcsi.science/1062-8738/article/view/183533
- DOI: https://doi.org/10.3103/S1062873816010135
- ID: 183533
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Аннотация
The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.
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Об авторах
E. Kozhemyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Автор, ответственный за переписку.
Email: kozhemyakina@isp.nsc.ru
Россия, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kozhemyakina@isp.nsc.ru
Россия, Novosibirsk, 630090
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