Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs
- Авторлар: Kozhemyakina E.V.1, Zhuravlev K.S.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 80, № 1 (2016)
- Беттер: 23-27
- Бөлім: Proceedings of the XIV International Conference “Luminescence and Laser Physics”
- URL: https://journals.rcsi.science/1062-8738/article/view/183533
- DOI: https://doi.org/10.3103/S1062873816010135
- ID: 183533
Дәйексөз келтіру
Аннотация
The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.
Негізгі сөздер
Авторлар туралы
E. Kozhemyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: kozhemyakina@isp.nsc.ru
Ресей, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kozhemyakina@isp.nsc.ru
Ресей, Novosibirsk, 630090
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