Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs
- Autores: Kozhemyakina E.V.1, Zhuravlev K.S.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 80, Nº 1 (2016)
- Páginas: 23-27
- Seção: Proceedings of the XIV International Conference “Luminescence and Laser Physics”
- URL: https://journals.rcsi.science/1062-8738/article/view/183533
- DOI: https://doi.org/10.3103/S1062873816010135
- ID: 183533
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Resumo
The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.
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Sobre autores
E. Kozhemyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: kozhemyakina@isp.nsc.ru
Rússia, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kozhemyakina@isp.nsc.ru
Rússia, Novosibirsk, 630090
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