Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs


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The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.

Sobre autores

E. Kozhemyakina

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Autor responsável pela correspondência
Email: kozhemyakina@isp.nsc.ru
Rússia, Novosibirsk, 630090

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: kozhemyakina@isp.nsc.ru
Rússia, Novosibirsk, 630090

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