Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.

作者简介

E. Kozhemyakina

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: kozhemyakina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

K. Zhuravlev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: kozhemyakina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

补充文件

附件文件
动作
1. JATS XML

版权所有 © Allerton Press, Inc., 2016