Email this article Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs
- Authors: Kozhemyakina E.V.1, Zhuravlev K.S.1
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 80, No 1 (2016)
- Pages: 23-27
- Section: Proceedings of the XIV International Conference “Luminescence and Laser Physics”
- URL: https://journals.rcsi.science/1062-8738/article/view/183533
- DOI: https://doi.org/10.3103/S1062873816010135
- ID: 183533
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Abstract
The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.
About the authors
E. V. Kozhemyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: kozhemyakina@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kozhemyakina@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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