Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs
- 作者: Kozhemyakina E.V.1, Zhuravlev K.S.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 80, 编号 1 (2016)
- 页面: 23-27
- 栏目: Proceedings of the XIV International Conference “Luminescence and Laser Physics”
- URL: https://journals.rcsi.science/1062-8738/article/view/183533
- DOI: https://doi.org/10.3103/S1062873816010135
- ID: 183533
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详细
The effect of the initial density of nonequilibrium electron–hole pairs on the kinetics of their relaxation is analyzed. The influence of cooling, formation, ionization, and radiative recombination of excitons is discussed. It is shown that the exciton lifetime increases with the optical excitation density and, as a result, maximum exciton density is attained for a longer time.
作者简介
E. Kozhemyakina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: kozhemyakina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: kozhemyakina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
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