Effect of a Low-Temperature Si Underlayer on the Photoluminescence of Misfit Dislocations in Si(001)Si1 − xGex Heterostructures with Ge-Rich Alloy Layers

Аннотация

The effect a low-temperature Si underlayer has on the photoluminescence of misfit dislocations in Si(001)Si_{1 – x}Ge_x heterostructures with high Ge contents in a SiGe alloy layer is investigated. It is found that the introduction of this layer prevents the formation of dislocations in the alloy layer.