Email this article Effect of a Low-Temperature Si Underlayer on the Photoluminescence of Misfit Dislocations in Si(001)Si1 − xGex Heterostructures with Ge-Rich Alloy Layers
- Authors: Akmaev M.A.1,2, Burbaev T.M.1
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Affiliations:
- Lebedev Physical Institute
- Moscow State University
- Issue: Vol 82, No 4 (2018)
- Pages: 409-411
- Section: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185357
- DOI: https://doi.org/10.3103/S1062873818040044
- ID: 185357
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Abstract
The effect a low-temperature Si underlayer has on the photoluminescence of misfit dislocations in Si(001)Si1 – xGex heterostructures with high Ge contents in a SiGe alloy layer is investigated. It is found that the introduction of this layer prevents the formation of dislocations in the alloy layer.
About the authors
M. A. Akmaev
Lebedev Physical Institute; Moscow State University
Author for correspondence.
Email: mark.akmaev@yandex.ru
Russian Federation, Moscow, 119991; Moscow, 119991
T. M. Burbaev
Lebedev Physical Institute
Email: mark.akmaev@yandex.ru
Russian Federation, Moscow, 119991
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