电邮这篇文章 Effect of a Low-Temperature Si Underlayer on the Photoluminescence of Misfit Dislocations in Si(001)Si1 − xGex Heterostructures with Ge-Rich Alloy Layers
- 作者: Akmaev M.A.1,2, Burbaev T.M.1
-
隶属关系:
- Lebedev Physical Institute
- Moscow State University
- 期: 卷 82, 编号 4 (2018)
- 页面: 409-411
- 栏目: Article
- URL: https://journals.rcsi.science/1062-8738/article/view/185357
- DOI: https://doi.org/10.3103/S1062873818040044
- ID: 185357
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详细
The effect a low-temperature Si underlayer has on the photoluminescence of misfit dislocations in Si(001)Si1 – xGex heterostructures with high Ge contents in a SiGe alloy layer is investigated. It is found that the introduction of this layer prevents the formation of dislocations in the alloy layer.
作者简介
M. Akmaev
Lebedev Physical Institute; Moscow State University
编辑信件的主要联系方式.
Email: mark.akmaev@yandex.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119991
T. Burbaev
Lebedev Physical Institute
Email: mark.akmaev@yandex.ru
俄罗斯联邦, Moscow, 119991
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