Secondary ion emission from a GaAs single crystal upon bombardment with Bim+ cluster ions
- 作者: Morozov S.N.1, Rasulev U.K.1
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隶属关系:
- Institute of Ion-Plasma and Laser Technologies
- 期: 卷 80, 编号 2 (2016)
- 页面: 105-108
- 栏目: Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
- URL: https://journals.rcsi.science/1062-8738/article/view/183769
- DOI: https://doi.org/10.3103/S1062873816020210
- ID: 183769
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详细
Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bim+(m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga+ and Ga2+ ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga+ ions upon bombardment with Bi2+–Bi5+–ions is 35–75%.
作者简介
S. Morozov
Institute of Ion-Plasma and Laser Technologies
编辑信件的主要联系方式.
Email: morozov@aie.uz
乌兹别克斯坦, Tashkent, 100125
U. Rasulev
Institute of Ion-Plasma and Laser Technologies
Email: morozov@aie.uz
乌兹别克斯坦, Tashkent, 100125
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