Secondary ion emission from a GaAs single crystal upon bombardment with Bim+ cluster ions

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Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bim+(m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga+ and Ga2+ ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga+ ions upon bombardment with Bi2+–Bi5+–ions is 35–75%.

作者简介

S. Morozov

Institute of Ion-Plasma and Laser Technologies

编辑信件的主要联系方式.
Email: morozov@aie.uz
乌兹别克斯坦, Tashkent, 100125

U. Rasulev

Institute of Ion-Plasma and Laser Technologies

Email: morozov@aie.uz
乌兹别克斯坦, Tashkent, 100125

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