Secondary ion emission from a GaAs single crystal upon bombardment with Bim+ cluster ions

Аннотация

Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bi_m⁺(m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga⁺ and Ga₂⁺ ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga⁺ ions upon bombardment with Bi₂⁺–Bi₅⁺–ions is 35–75%.