Email this article Secondary ion emission from a GaAs single crystal upon bombardment with Bim+ cluster ions
- Authors: Morozov S.N.1, Rasulev U.K.1
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Affiliations:
- Institute of Ion-Plasma and Laser Technologies
- Issue: Vol 80, No 2 (2016)
- Pages: 105-108
- Section: Proceedings of the 22nd International Conference “Ion-Surface Interaction (ISI-2015)”
- URL: https://journals.rcsi.science/1062-8738/article/view/183769
- DOI: https://doi.org/10.3103/S1062873816020210
- ID: 183769
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Abstract
Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bim+(m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga+ and Ga2+ ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga+ ions upon bombardment with Bi2+–Bi5+–ions is 35–75%.
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About the authors
S. N. Morozov
Institute of Ion-Plasma and Laser Technologies
Author for correspondence.
Email: morozov@aie.uz
Uzbekistan, Tashkent, 100125
U. Kh. Rasulev
Institute of Ion-Plasma and Laser Technologies
Email: morozov@aie.uz
Uzbekistan, Tashkent, 100125
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