One possibility of mathematically modeling the thermal effect of a finely focused electron beam on a homogeneous semiconductor

A. N. Amrastanov; S. A. Ginzgeymer; M. A. Stepovich; M. N. Filippov

doi:10.3103/S1062873816100038

One possibility of mathematically modeling the thermal effect of a finely focused electron beam on a homogeneous semiconductor

作者: Amrastanov A.N.¹, Ginzgeymer S.A.², Stepovich M.A.¹^,3, Filippov M.N.⁴
隶属关系:
1. Tsiolkovskii Kaluga State University
2. Bauman State Technical University, Kaluga branch
3. Plekhanov Russian University of Economics, Ivanovo branch
4. Kurnakov Institute of General and Inorganic Chemistry
期: 卷 80, 编号 10 (2016)
页面: 1290-1294
栏目: Proceedings of the VI International Conference “Crystal Physics and the Deformation Behavior of Promising Materials”
URL: https://journals.rcsi.science/1062-8738/article/view/184860
DOI: https://doi.org/10.3103/S1062873816100038
ID: 184860

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详细

The problem of heat distribution in materials irradiated with finely focused medium-energy electron beams is considered by means of mathematical simulation. A model is developed by solving a multidimensional heat-transfer steady equation using the Green function. A model that can be applied to a broad class of solid bodies and the range of energies of primary electrons is used as the source function. Some results are illustrated using the example of semiconductor materials used in electronics.