One possibility of mathematically modeling the thermal effect of a finely focused electron beam on a homogeneous semiconductor

A. N. Amrastanov; S. A. Ginzgeymer; M. A. Stepovich; M. N. Filippov

doi:10.3103/S1062873816100038

One possibility of mathematically modeling the thermal effect of a finely focused electron beam on a homogeneous semiconductor

Авторлар: Amrastanov A.N.¹, Ginzgeymer S.A.², Stepovich M.A.¹^,3, Filippov M.N.⁴
Мекемелер:
1. Tsiolkovskii Kaluga State University
2. Bauman State Technical University, Kaluga branch
3. Plekhanov Russian University of Economics, Ivanovo branch
4. Kurnakov Institute of General and Inorganic Chemistry
Шығарылым: Том 80, № 10 (2016)
Беттер: 1290-1294
Бөлім: Proceedings of the VI International Conference “Crystal Physics and the Deformation Behavior of Promising Materials”
URL: https://journals.rcsi.science/1062-8738/article/view/184860
DOI: https://doi.org/10.3103/S1062873816100038
ID: 184860

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The problem of heat distribution in materials irradiated with finely focused medium-energy electron beams is considered by means of mathematical simulation. A model is developed by solving a multidimensional heat-transfer steady equation using the Green function. A model that can be applied to a broad class of solid bodies and the range of energies of primary electrons is used as the source function. Some results are illustrated using the example of semiconductor materials used in electronics.