A Tunnel Hamiltonian for Impure  M–I–M  Junctions

V. Ya. Kirpichenkov; N. V. Kirpichenkova; O. I. Lozin; A. A. Pukhlova

doi:10.3103/S1062873818070262

A Tunnel Hamiltonian for Impure M–I–M Junctions

作者: Kirpichenkov V.Y.¹, Kirpichenkova N.V.¹, Lozin O.I.¹, Pukhlova A.A.¹
隶属关系:
1. Platov South Russian State Polytechnic University
期: 卷 82, 编号 7 (2018)
页面: 853-855
栏目: Article
URL: https://journals.rcsi.science/1062-8738/article/view/185455
DOI: https://doi.org/10.3103/S1062873818070262
ID: 185455

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详细

It is established that in impure (low concentrations of identical nonmagnetic impurities in the I-layer) M–I–M junctions (M = N, S; N is a normal metal, S is a superconductor, and I is an insulator), the matrix elements of a tunnel Hamiltonian differ radically from those in pure (without impurities in the I-layer) M–I–M junctions in the energy range of tunnel resonances associated with random quantum shortcuts in a disordered I-layer.