A Tunnel Hamiltonian for Impure M–I–M Junctions

Аннотация

It is established that in impure (low concentrations of identical nonmagnetic impurities in the I-layer) M–I–M junctions (M = N, S; N is a normal metal, S is a superconductor, and I is an insulator), the matrix elements of a tunnel Hamiltonian differ radically from those in pure (without impurities in the I-layer) M–I–M junctions in the energy range of tunnel resonances associated with random quantum shortcuts in a disordered I-layer.