Email this article Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice
- Authors: Balanov A.G.1,2, Koronovskii A.A.3, Moskalenko O.I.3, Selskii A.O.3,1, Hramov A.E.1
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Affiliations:
- Saratov State Technical University
- Department of Physics
- Saratov State University
- Issue: Vol 81, No 1 (2017)
- Pages: 43-46
- Section: Proceedings of the XV National Sukhorukov Seminar “Wave Phenomena in Inhomogeneous Media” (Waves 2016)
- URL: https://journals.rcsi.science/1062-8738/article/view/184928
- DOI: https://doi.org/10.3103/S1062873817010063
- ID: 184928
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Abstract
The effect doping density perturbations have on the current characteristics in a semiconductor superlattice is studied. The current characteristics are shown to depend on the localization and form of the perturbation. The effect of perturbations is strongest near the superlattice emitter. The effect grows along with the density profile integral and depends weakly on the form of the profile.
About the authors
A. G. Balanov
Saratov State Technical University; Department of Physics
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410054; Loughborough, LE11 3TU
A. A. Koronovskii
Saratov State University
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012
O. I. Moskalenko
Saratov State University
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012
A. O. Selskii
Saratov State University; Saratov State Technical University
Author for correspondence.
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410012; Saratov, 410054
A. E. Hramov
Saratov State Technical University
Email: feanorberserk@gmail.com
Russian Federation, Saratov, 410054
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