Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice

A. G. Balanov; A. A. Koronovskii; O. I. Moskalenko; A. O. Selskii; A. E. Hramov

doi:10.3103/S1062873817010063

Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice

Авторлар: Balanov A.G.¹^,2, Koronovskii A.A.³, Moskalenko O.I.³, Selskii A.O.³^,1, Hramov A.E.¹
Мекемелер:
1. Saratov State Technical University
2. Department of Physics
3. Saratov State University
Шығарылым: Том 81, № 1 (2017)
Беттер: 43-46
Бөлім: Proceedings of the XV National Sukhorukov Seminar “Wave Phenomena in Inhomogeneous Media” (Waves 2016)
URL: https://journals.rcsi.science/1062-8738/article/view/184928
DOI: https://doi.org/10.3103/S1062873817010063
ID: 184928

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат
Рұқсат жабық

Рұқсат берілді
Рұқсат жабық

Тек жазылушылар үшін

Аннотация
Авторлар туралы
Әдебиет тізімі
Қосымша файлдар
Статистика

Аннотация

The effect doping density perturbations have on the current characteristics in a semiconductor superlattice is studied. The current characteristics are shown to depend on the localization and form of the perturbation. The effect of perturbations is strongest near the superlattice emitter. The effect grows along with the density profile integral and depends weakly on the form of the profile.