Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice

A. G. Balanov; A. A. Koronovskii; O. I. Moskalenko; A. O. Selskii; A. E. Hramov

doi:10.3103/S1062873817010063

Effect of the form and localization of doping density perturbations on the current characteristics in a semiconductor superlattice

Autores: Balanov A.G.¹^,2, Koronovskii A.A.³, Moskalenko O.I.³, Selskii A.O.³^,1, Hramov A.E.¹
Afiliações:
1. Saratov State Technical University
2. Department of Physics
3. Saratov State University
Edição: Volume 81, Nº 1 (2017)
Páginas: 43-46
Seção: Proceedings of the XV National Sukhorukov Seminar “Wave Phenomena in Inhomogeneous Media” (Waves 2016)
URL: https://journals.rcsi.science/1062-8738/article/view/184928
DOI: https://doi.org/10.3103/S1062873817010063
ID: 184928

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Resumo

The effect doping density perturbations have on the current characteristics in a semiconductor superlattice is studied. The current characteristics are shown to depend on the localization and form of the perturbation. The effect of perturbations is strongest near the superlattice emitter. The effect grows along with the density profile integral and depends weakly on the form of the profile.