电邮这篇文章 Electronic structure of SiO2: An X-ray emission spectroscopic and density functional theoretical study
- 作者: Danilenko T.N.1, Tatevosyan M.M.1, Vlasenko V.G.1
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隶属关系:
- Research Institute of Physics
- 期: 卷 80, 编号 6 (2016)
- 页面: 738-741
- 栏目: Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
- URL: https://journals.rcsi.science/1062-8738/article/view/184612
- DOI: https://doi.org/10.3103/S1062873816060113
- ID: 184612
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详细
The electronic structure of SiO2 is investigated by means of valence to core X-ray emission spectroscopy and quantum-mechanical calculations in the density functional theory approximation. Analysis of a complete set of SiKα1, SiL2, 3, and OKα X-ray emission and XPS spectra along with the calculated data provides comprehensive information on chemical interactions that occur in SiO2.
作者简介
T. Danilenko
Research Institute of Physics
编辑信件的主要联系方式.
Email: tdanil1982@yandex.ru
俄罗斯联邦, Rostov-on-Don, 344090
M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
俄罗斯联邦, Rostov-on-Don, 344090
V. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
俄罗斯联邦, Rostov-on-Don, 344090
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