Electronic structure of SiO2: An X-ray emission spectroscopic and density functional theoretical study
- Авторы: Danilenko T.N.1, Tatevosyan M.M.1, Vlasenko V.G.1
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Учреждения:
- Research Institute of Physics
- Выпуск: Том 80, № 6 (2016)
- Страницы: 738-741
- Раздел: Proceedings of the Interdisciplinary Symposium “Ordering in Minerals and Alloys” OMA-18 and Proceedings of the International Interdisciplinary Symposium “Order, Disorder, and Properties of Oxides” ODPO-18
- URL: https://journals.rcsi.science/1062-8738/article/view/184612
- DOI: https://doi.org/10.3103/S1062873816060113
- ID: 184612
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Аннотация
The electronic structure of SiO2 is investigated by means of valence to core X-ray emission spectroscopy and quantum-mechanical calculations in the density functional theory approximation. Analysis of a complete set of SiKα1, SiL2, 3, and OKα X-ray emission and XPS spectra along with the calculated data provides comprehensive information on chemical interactions that occur in SiO2.
Об авторах
T. Danilenko
Research Institute of Physics
Автор, ответственный за переписку.
Email: tdanil1982@yandex.ru
Россия, Rostov-on-Don, 344090
M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
Россия, Rostov-on-Don, 344090
V. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
Россия, Rostov-on-Don, 344090
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