Formation of SEM Images in the Slow Secondary Electron Mode. 1. Structures with Large Side Wall Inclinations
- 作者: Novikov Y.A.1
-
隶属关系:
- Prokhorov General Physics Institute, Russian Academy of Sciences
- 期: 卷 13, 编号 4 (2019)
- 页面: 727-733
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196413
- DOI: https://doi.org/10.1134/S102745101904030X
- ID: 196413
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详细
The formation of images of silicon microstructures in a scanning electron microscope, operating in the modes of collecting secondary slow and backscattered electrons, is studied. An MShPS-2.0Si test object was used as the object of study. The test object consists of pitch structures (protrusion and grooves in silicon), the profile of which has a trapezoidal shape with large inclinations of the side walls. The signal of slow secondary electrons is formed in different ways for surfaces with and without a relief. At the same time, the signal of backscattered electrons is formed in the same way for surfaces with and without a relief.
作者简介
Yu. Novikov
Prokhorov General Physics Institute, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: nya@kapella.gpi.ru
俄罗斯联邦, Moscow, 119991
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