Estimation of the Heating of a Semiconductor Target Surface by a Low-Energy Electron Beam

Аннотация

The problem of heat distribution in semiconductor materials irradiated with sharply focused lowenergy electron beams in the absence of heat exchange between the target and external medium is considered by methods of mathematical modeling. The model is based on solving a multidimensional steady-state heatconduction equation using Green’s function. The source function is a model applicable to a wide class of solids and a wide range of energies of primary electrons, based on separate description of the contributions of absorbed and backscattered electrons to the energy dissipated in the target. Using the features of such an approach, a nonmonotonic dependence of the temperature of maximum heating of the target on the energy of primary electrons is explained. The results of calculations using the considered model of heating the target with an electron probe are presented for various semiconductor materials of electronic engineering.