On the possibility of applying the bers apparatus to modeling the processes of heat and mass transfer caused by electrons in a planar multilayer medium


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Some possibilities of joint application of the Bers factorial-function apparatus and matrix method to the mathematical modeling of heat and mass transfer processes in a multilayer medium are considered. The possibility of using this method is shown by the example of the diffusion of minority charge carriers generated by a wide electron beam in multilayer semiconductor planar structures. The results of calculations by this method for homogeneous and three-layer semiconductor structures are presented.

作者简介

Yu. Gladyshev

Kaluga State University

Email: v572264@yandex.ru
俄罗斯联邦, Kaluga, 248023

V. Kalmanovich

Kaluga State University

编辑信件的主要联系方式.
Email: v572264@yandex.ru
俄罗斯联邦, Kaluga, 248023

M. Stepovich

Kaluga State University

Email: v572264@yandex.ru
俄罗斯联邦, Kaluga, 248023

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