On the possibility of applying the bers apparatus to modeling the processes of heat and mass transfer caused by electrons in a planar multilayer medium
- 作者: Gladyshev Y.A.1, Kalmanovich V.V.1, Stepovich M.A.1
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隶属关系:
- Kaluga State University
- 期: 卷 11, 编号 5 (2017)
- 页面: 1096-1100
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/194392
- DOI: https://doi.org/10.1134/S1027451017050263
- ID: 194392
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详细
Some possibilities of joint application of the Bers factorial-function apparatus and matrix method to the mathematical modeling of heat and mass transfer processes in a multilayer medium are considered. The possibility of using this method is shown by the example of the diffusion of minority charge carriers generated by a wide electron beam in multilayer semiconductor planar structures. The results of calculations by this method for homogeneous and three-layer semiconductor structures are presented.
作者简介
Yu. Gladyshev
Kaluga State University
Email: v572264@yandex.ru
俄罗斯联邦, Kaluga, 248023
V. Kalmanovich
Kaluga State University
编辑信件的主要联系方式.
Email: v572264@yandex.ru
俄罗斯联邦, Kaluga, 248023
M. Stepovich
Kaluga State University
Email: v572264@yandex.ru
俄罗斯联邦, Kaluga, 248023
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