On the possibility of applying the bers apparatus to modeling the processes of heat and mass transfer caused by electrons in a planar multilayer medium
- Autores: Gladyshev Y.A.1, Kalmanovich V.V.1, Stepovich M.A.1
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Afiliações:
- Kaluga State University
- Edição: Volume 11, Nº 5 (2017)
- Páginas: 1096-1100
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/194392
- DOI: https://doi.org/10.1134/S1027451017050263
- ID: 194392
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Resumo
Some possibilities of joint application of the Bers factorial-function apparatus and matrix method to the mathematical modeling of heat and mass transfer processes in a multilayer medium are considered. The possibility of using this method is shown by the example of the diffusion of minority charge carriers generated by a wide electron beam in multilayer semiconductor planar structures. The results of calculations by this method for homogeneous and three-layer semiconductor structures are presented.
Sobre autores
Yu. Gladyshev
Kaluga State University
Email: v572264@yandex.ru
Rússia, Kaluga, 248023
V. Kalmanovich
Kaluga State University
Autor responsável pela correspondência
Email: v572264@yandex.ru
Rússia, Kaluga, 248023
M. Stepovich
Kaluga State University
Email: v572264@yandex.ru
Rússia, Kaluga, 248023
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