Fabrication of quasi-optical selective elements for the terahertz range in the form of pseudometallic structures via deep X-ray lithography


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A technique for fabricating self-bearing pseudometallic structures, which hold promise for utilization as quasi-optical frequency-selective elements in the terahertz range of the electromagnetic spectrum, is discussed. The technique is based on microstructuring a continuous dielectric layer via stencilled X-ray lithography involving synchrotron radiation with subsequent metallization of the entire structure surface. The main manufacturing schemes are described, including fabrication of the initial substrates and X-ray masks. Examples of samples of the produced selective elements, such as frequency filters and flat lenses, as well as their operating characteristics, are presented.

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A. Gentselev

Budker Institute of Nuclear Physics, Siberian Branch

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Email: A.N.Gentselev@inp.nsk.su
俄罗斯联邦, Novosibirsk, 630090

S. Kuznetsov

Budker Institute of Nuclear Physics, Siberian Branch; Novosibirsk National Research State University; Design-and-Technology Institute of Applied Microelectronics, Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: A.N.Gentselev@inp.nsk.su
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630090

S. Baev

Institute of Automation and Electrometry, Siberian Branch

Email: A.N.Gentselev@inp.nsk.su
俄罗斯联邦, Novosibirsk, 630090

B. Goldenberg

Budker Institute of Nuclear Physics, Siberian Branch

Email: A.N.Gentselev@inp.nsk.su
俄罗斯联邦, Novosibirsk, 630090

E. Lonshakov

Novosibirsk National Research State University; Institute of Automation and Electrometry, Siberian Branch

Email: A.N.Gentselev@inp.nsk.su
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090

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