Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition
- 作者: Alfimova D.L.1, Lunin L.S.1, Lunina M.L.1, Sysoev I.A.2, Pashchenko A.S.1, Danilina E.M.1
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隶属关系:
- Southern Scientific Center, Russian Academy of Sciences
- North-Caucasus Federal University
- 期: 卷 13, 编号 3 (2019)
- 页面: 493-498
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/196337
- DOI: https://doi.org/10.1134/S1027451019030236
- ID: 196337
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详细
GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the GexS1 – x/Si layer. Finally, GexSi1 – x/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds.
作者简介
D. Alfimova
Southern Scientific Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: 1974dina@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
L. Lunin
Southern Scientific Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
M. Lunina
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
I. Sysoev
North-Caucasus Federal University
Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355009
A. Pashchenko
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
E. Danilina
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006
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