Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition


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GexSi1 – x/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the GexS1 – x/Si layer. Finally, GexSi1 – x/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds.

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D. Alfimova

Southern Scientific Center, Russian Academy of Sciences

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Email: 1974dina@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

L. Lunin

Southern Scientific Center, Russian Academy of Sciences

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Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

M. Lunina

Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

I. Sysoev

North-Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355009

A. Pashchenko

Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

E. Danilina

Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

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