Investigation of GexSi1 –x/Si Nanoheterostructures Grown by Ion-Beam Deposition

Аннотация

Ge_xSi_{1 – x}/Si nanoheterostructures are synthesized via ion-beam deposition. The crystal structure, surface morphology, and chemical composition are investigated using X-ray diffraction, Raman spectroscopy, scanning probe microscopy, and Auger electron spectroscopy methods. The germanium content is shown to affect the structural perfection and surface morphology of the Ge_xS_{1 – x}/Si layer. Finally, Ge_xSi_{1 – x}/Si nanoheterostructures are established to serve as cheap synthetic substrates for high efficiency cascade solar cells based on III—V compounds.