TEM Study of the microstructure of melt grown FeGe2 single crystals
- Autores: Bunkin A.Y.1, Kolosov V.Y.1, Papushina T.I.1
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Afiliações:
- Ural Federal University
- Edição: Volume 11, Nº 5 (2017)
- Páginas: 1039-1041
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/194228
- DOI: https://doi.org/10.1134/S102745101705024X
- ID: 194228
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Resumo
The results of transmission electron microscopy and metallographic investigation of the microstructure of FeGe2 single crystals are reported. The main defects revealed are edge dislocations, dislocation loops, and stacking faults located predominantly in close-packed crystallographic planes. The spatial distribution of structural defects is shown to correlate with the specific features of the growth technology. The dislocation density in the samples studied is about 104 cm–2 and is almost constant in a wide pulling-rate range. Small amounts of doping elements (Co, Al, Sn) do not significantly change the microstructure, and thus high quality crystals can be obtained after corresponding correction of the growth parameters.
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Sobre autores
A. Bunkin
Ural Federal University
Autor responsável pela correspondência
Email: bunkin@e1.ru
Rússia, Ekaterinburg, 620002
V. Kolosov
Ural Federal University
Email: bunkin@e1.ru
Rússia, Ekaterinburg, 620002
T. Papushina
Ural Federal University
Email: bunkin@e1.ru
Rússia, Ekaterinburg, 620002
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