Monte Carlo method in scanning electron microscopy. 1. Modeling and experiment


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

Results of modeling by the Monte Carlo method of signals from a scanning electron microscope examining rectangular grooves in silicon are compared with experimental results obtained for a scanning electron microscope operating in the secondary slow electron collection mode. The comparison is performed for the peaks of signals characterizing the primary electron beam near the walls of rectangular grooves: the widths and amplitudes of the peaks, the integral contributions of the peaks, and the positions of the peaks relative to the walls of the grooves. The parameters and their dependences on the primary electron energy are compared. All dependences are very different in terms of the parameters of the peaks and their dependence on the primary electron energy. This proves that the traditional representation of the Monte Carlo method does not work in scanning electron microscopy.

作者简介

Yu. Novikov

Prokhorov General Physics Institute; National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)

编辑信件的主要联系方式.
Email: nya@kapella.gpi.ru
俄罗斯联邦, Moscow, 119991; Moscow, 115409

补充文件

附件文件
动作
1. JATS XML

版权所有 © Pleiades Publishing, Ltd., 2017