Modification of the titanium film–aluminum substrate system by a high-intensity pulsed electron beam with a submillisecond duration
- Authors: Ivanov Y.F.1,2, Koval N.N.1,2, Petrikova E.A.1,2, Krysina O.V.1,2, Ivanova O.V.3, Ikonnikova I.A.3, Teresov A.D.1,2, Shugurov V.V.1
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Affiliations:
- Institute of High Current Electronics, Siberian Branch
- National Research Tomsk State University
- Tomsk State University of Architecture and Building
- Issue: Vol 10, No 4 (2016)
- Pages: 723-727
- Section: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/189223
- DOI: https://doi.org/10.1134/S102745101604008X
- ID: 189223
Cite item
Abstract
Numerical simulation of the thermal processes that occur during doping of an Al surface with titanium by the method of liquid-phase mixing of a film–substrate system using an intense pulsed electron beam is carried out. As a result of our studies, it is shown that melting of the Ti-film–Al-substrate system makes it possible to form a multiphase submicrocrystalline structure with high strength and tribological properties in the surface layer.
About the authors
Yu. F. Ivanov
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Author for correspondence.
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
N. N. Koval
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
E. A. Petrikova
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
O. V. Krysina
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
O. V. Ivanova
Tomsk State University of Architecture and Building
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634003
I. A. Ikonnikova
Tomsk State University of Architecture and Building
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634003
A. D. Teresov
Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055; Tomsk, 634050
V. V. Shugurov
Institute of High Current Electronics, Siberian Branch
Email: yufi55@mail.ru
Russian Federation, Tomsk, 634055
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