Modification of the titanium film–aluminum substrate system by a high-intensity pulsed electron beam with a submillisecond duration


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
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Рұқсат жабық Тек жазылушылар үшін

Аннотация

Numerical simulation of the thermal processes that occur during doping of an Al surface with titanium by the method of liquid-phase mixing of a film–substrate system using an intense pulsed electron beam is carried out. As a result of our studies, it is shown that melting of the Ti-film–Al-substrate system makes it possible to form a multiphase submicrocrystalline structure with high strength and tribological properties in the surface layer.

Авторлар туралы

Yu. Ivanov

Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University

Хат алмасуға жауапты Автор.
Email: yufi55@mail.ru
Ресей, Tomsk, 634055; Tomsk, 634050

N. Koval

Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University

Email: yufi55@mail.ru
Ресей, Tomsk, 634055; Tomsk, 634050

E. Petrikova

Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University

Email: yufi55@mail.ru
Ресей, Tomsk, 634055; Tomsk, 634050

O. Krysina

Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University

Email: yufi55@mail.ru
Ресей, Tomsk, 634055; Tomsk, 634050

O. Ivanova

Tomsk State University of Architecture and Building

Email: yufi55@mail.ru
Ресей, Tomsk, 634003

I. Ikonnikova

Tomsk State University of Architecture and Building

Email: yufi55@mail.ru
Ресей, Tomsk, 634003

A. Teresov

Institute of High Current Electronics, Siberian Branch; National Research Tomsk State University

Email: yufi55@mail.ru
Ресей, Tomsk, 634055; Tomsk, 634050

V. Shugurov

Institute of High Current Electronics, Siberian Branch

Email: yufi55@mail.ru
Ресей, Tomsk, 634055

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