Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of  n - and  p -type conductivity

L. P. Steblenko; A. A. Podolyan; A. B. Nadtochiy; A. N. Kuryliuk; D. V. Kalinichenko; Yu. L. Kobzar; A. N. Krit; S. N. Naumenko

doi:10.1134/S1027451016020361

Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of n- and p-type conductivity

Авторы: Steblenko L.P.¹, Podolyan A.A.¹, Nadtochiy A.B.¹, Kuryliuk A.N.¹, Kalinichenko D.V.¹, Kobzar Y.L.¹, Krit A.N.², Naumenko S.N.¹
Учреждения:
1. Department of Physics
2. Scientific Research Center Physical and Chemical Materials Science
Выпуск: Том 10, № 3 (2016)
Страницы: 672-675
Раздел: Article
URL: https://journals.rcsi.science/1027-4510/article/view/189173
DOI: https://doi.org/10.1134/S1027451016020361
ID: 189173

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Аннотация

We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found.