Ionization effects in Si/SiO2: Li, Na, K implanted structures under the impact of high-energy α particles

Аннотация

The method of thermally stimulated electron emission is applied in order to investigate ionization processes and defect formation in Si/SiO₂ structures under the impact of high-energy α particles. The implantation of Si/SiO₂ films with Li⁺, Na⁺, and K⁺ alkali-metal ions is found to contribute to the formation of active emission L centers in the modified oxide layer, which provides sensitivity to α radiation. The parameters of the emission centers are identified and analyzed. It is shown than Si/SiO₂: Li heterostructures could be used to detect α radiation.