Backscattered electron imaging of microand nanostructures: 4. Structures with a trapezoidal profile and large side-wall inclination angles

Resumo

The results of investigating the imaging of grooves in silicon with a trapezoidal profile and large side-wall inclination angles, which are obtained using a scanning electron microscope operating in the back-scattered-electron collection mode, are presented. Only two among the four known imaging mechanisms is demonstrated to provide contributions to the image-formation process. The lack of contributions from two other mechanisms is explained.